Self-assembled InAs quantum wire lasers on „001...InP at 1.6 m

In this work, the authors present results on the growth by atomic layer molecular beam epitaxy and characterization of lasers with one and three stacked layers of InAs quantum wires QWRs as active zone and aluminum-free waveguides on 001 InP substrates. The separated confinement heterostructure consists of n-p InP claddings and a waveguide formed by short period superlattices of InP 5 / GaInAs 4 lattice matched to the InP substrate. The optimum growth conditions substrate temperature and As and P pressures have been determined to obtain waveguides with a flat surface in order to get a uniform QWR distribution. Lasing emission is observed at a wavelength of 1.66 m up to 270 K from 15 3000 m2 devices, with a threshold current density at that 2 temperature of 2 kA/cm . © 2006 American Institute of Physics. DOI: 10.1063/1.2335775